N-CHANNEL SuperMESH™ Power MOSFET featuring 700V drain-to-source breakdown voltage and 8.6A continuous drain current. This through-hole component offers a low 850mΩ Rds On and is housed in a TO-220-3 package. Key switching characteristics include a 19ns fall time, 22ns turn-on delay, and 46ns turn-off delay. Maximum power dissipation is rated at 35W, with operating temperatures ranging from -55°C to 150°C.
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Stmicroelectronics STP10NK70ZFP technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 850mR |
| Drain to Source Voltage (Vdss) | 700V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 16.4mm |
| Input Capacitance | 2nF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 850mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 46ns |
| Turn-On Delay Time | 22ns |
| Width | 4.6mm |
| RoHS | Compliant |
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