N-channel SuperMESH™ power MOSFET featuring 800V drain-source breakdown voltage and 9A continuous drain current. Offers 900mΩ maximum drain-source on-resistance and 160W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component boasts a 3.75V threshold voltage and includes Zener protection. Key switching characteristics include a 30ns turn-on delay and 17ns fall time.
PackageTO-220
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP10NK80Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
9A
Current Rating
9A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
900mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
30V
Height
9.15mm
Input Capacitance
2.18nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
900mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
65ns
Turn-On Delay Time
30ns
DC Rated Voltage
800V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STP10NK80Z to view detailed technical specifications.
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