N-channel SuperMESH™ Power MOSFET featuring 800V drain-source breakdown voltage and 9A continuous drain current. Offers a low 0.78 Ohm typical drain-source on-resistance. Designed for through-hole mounting in a TO-220FP package, this component boasts a maximum power dissipation of 40W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 30ns turn-on delay and 17ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STP10NK80ZFP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
900mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
30V
Height
9.3mm
Input Capacitance
2.18nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
40W
Radiation Hardening
No
Rds On Max
900mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
65ns
Turn-On Delay Time
30ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10NK80ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP10NK80ZFP to view detailed technical specifications.
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