N-channel power MOSFET featuring 500V drain-source breakdown voltage and 7A continuous drain current. This through-hole component offers a low 630mΩ drain-source on-resistance and 70W power dissipation. Designed for high-efficiency switching applications, it operates within a -55°C to 150°C temperature range and is packaged in a TO-220AB form factor. Key electrical characteristics include a 3V threshold voltage and fast switching times with a 7.8ns turn-on delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power70W
Quick Jump:
Technical Specifications
Stmicroelectronics STP10NM50N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
630mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
630mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
450pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
630mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
7.8ns
Turn-On Delay Time
7.8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STP10NM50N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
