N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers a low 550mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this device boasts a 70W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 15ns fall time, 32ns turn-off delay, and 10ns turn-on delay.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STP10NM60N datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STP10NM60N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 550mR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 10ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP10NM60N to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
