N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. Offers a low 550mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this device boasts a 70W power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 15ns fall time, 32ns turn-off delay, and 10ns turn-on delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STP10NM60N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
550mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
550mR
Fall Time
15ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
550mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
32ns
Turn-On Delay Time
10ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP10NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP10NM60N to view detailed technical specifications.
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