N-channel power MOSFET featuring 100V drain-source breakdown voltage and 110A continuous drain current. Offers low on-resistance with a maximum of 7mΩ at 10Vgs. Designed for through-hole mounting in a TO-220-3 package, this device operates from -55°C to 175°C and supports up to 150W power dissipation. Includes fast switching characteristics with turn-on delay of 25ns and turn-off delay of 52ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STP110N10F7 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 110A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 5.5nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 25ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP110N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STP110N10F7 to view detailed technical specifications.
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