N-channel power MOSFET featuring 100V drain-source breakdown voltage and 110A continuous drain current. Offers low on-resistance with a maximum of 7mΩ at 10Vgs. Designed for through-hole mounting in a TO-220-3 package, this device operates from -55°C to 175°C and supports up to 150W power dissipation. Includes fast switching characteristics with turn-on delay of 25ns and turn-off delay of 52ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STP110N10F7 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
7mR
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
5.5nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
7mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
52ns
Turn-On Delay Time
25ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP110N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STP110N10F7 to view detailed technical specifications.
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