N-channel SuperMESH™ Power MOSFET featuring 400V drain-to-source breakdown voltage and 9A continuous drain current. This through-hole component offers a low 0.49 Ohm typical drain-to-source resistance and 30W power dissipation. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is housed in a TO-220FP package. Key switching characteristics include an 18ns fall time, 20ns turn-on delay, and 40ns turn-off delay.
Stmicroelectronics STP11NK40ZFP technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.3mm |
| Input Capacitance | 930pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| Width | 4.6mm |
| RoHS | Compliant |
No datasheet is available for this part.
