N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 8.5A continuous drain current. This through-hole component offers a low 470mΩ maximum drain-source on-resistance. Operating across a wide temperature range from -55°C to 150°C, it boasts a 70W maximum power dissipation. Key switching characteristics include an 8ns turn-on delay and a 10ns fall time. Packaged in a TO-220AB form factor, this RoHS compliant device is designed for demanding power applications.
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Stmicroelectronics STP11NM50N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 470mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 470mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 547pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 470mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| Width | 4.6mm |
| RoHS | Compliant |
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