N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 8.5A continuous drain current. This through-hole component offers a low 470mΩ maximum drain-source on-resistance. Operating across a wide temperature range from -55°C to 150°C, it boasts a 70W maximum power dissipation. Key switching characteristics include an 8ns turn-on delay and a 10ns fall time. Packaged in a TO-220AB form factor, this RoHS compliant device is designed for demanding power applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STP11NM50N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
8.5A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
470mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
470mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
547pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
470mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
33ns
Turn-On Delay Time
8ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM50N to view detailed technical specifications.
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