N-channel power MOSFET featuring 600V drain-source breakdown voltage and 11A continuous drain current. Offers 450mΩ maximum drain-source on-resistance and 160W power dissipation. Designed for through-hole mounting in a TO-220 package, this component boasts fast switching speeds with turn-on delay of 20ns and fall time of 11ns. Operates within a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-220
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP11NM60 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
450mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
160W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Rds On Max
450mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
6ns
Turn-On Delay Time
20ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NM60 Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM60 to view detailed technical specifications.
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