N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10A continuous drain current. This component offers a low 0.45 Ohm maximum drain-source on-resistance and a 4V threshold voltage. Designed for through-hole mounting in a TO-220 package, it operates from -55°C to 150°C with a maximum power dissipation of 90W. Key switching characteristics include a 9ns fall time and 16ns turn-on delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP11NM60ND technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
450mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
850pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
450mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
FDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
50ns
Turn-On Delay Time
16ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM60ND to view detailed technical specifications.
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