N-channel Power MOSFET, 650V Drain-Source Breakdown Voltage, 11A Continuous Drain Current, and 380mΩ typical Drain-Source On-Resistance. Features a TO-220 package for through-hole mounting, with a maximum power dissipation of 110W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 20ns. This RoHS compliant component is designed for high-voltage applications.
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Stmicroelectronics STP11NM65N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 380mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 455mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 11ns |
| RoHS | Compliant |
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