N-channel Power MOSFET, 650V Drain-Source Breakdown Voltage, 11A Continuous Drain Current, and 380mΩ typical Drain-Source On-Resistance. Features a TO-220 package for through-hole mounting, with a maximum power dissipation of 110W and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 20ns. This RoHS compliant component is designed for high-voltage applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STP11NM65N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
380mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
800pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
455mR
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
55ns
Turn-On Delay Time
11ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP11NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STP11NM65N to view detailed technical specifications.
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