N-channel Power MOSFET featuring 650V drain-to-source breakdown voltage and 8.5A continuous drain current. This MDmesh M5 series component offers a low 0.39 Ohm typical drain-to-source resistance and 70W maximum power dissipation. Packaged in a TO-220 through-hole mount, it operates from -55°C to 150°C and includes fast switching characteristics with turn-on delay of 22.6ns and fall time of 23.4ns. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STP12N65M5 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
8.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
390mR
Drain to Source Voltage (Vdss)
650V
Fall Time
23.4ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
430mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
15.6ns
Turn-On Delay Time
22.6ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP12N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP12N65M5 to view detailed technical specifications.
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