N-channel power MOSFET featuring 500V drain-source breakdown voltage and 12A continuous drain current. Offers a low 300mOhm typical drain-source on-resistance. Encased in a TO-220 package for through-hole mounting, this RoHS compliant component operates from -65°C to 150°C with a maximum power dissipation of 160W.
PackageTO-220
Current Rating12A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP12NM50 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
12A
Current Rating
12A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
350mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
350mR
Gate to Source Voltage (Vgs)
30V
Height
9.15mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
160W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
350mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-On Delay Time
20ns
DC Rated Voltage
500V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP12NM50 Datasheet
Download the complete datasheet for Stmicroelectronics STP12NM50 to view detailed technical specifications.
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