N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 12A continuous drain current. Offers a low 300mOhm typical drain-source on-resistance. Encased in a TO-220FP package for through-hole mounting, this component operates from -65°C to 150°C with a maximum power dissipation of 35W. It is RoHS compliant and lead-free.
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Stmicroelectronics STP12NM50FP technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 350mR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.3mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 500V |
| Width | 4.6mm |
| RoHS | Compliant |
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