N-channel power MOSFET featuring 500V drain-source breakdown voltage and 11A continuous drain current. Offers a maximum drain-source on-resistance of 380mΩ at a 10V gate-source voltage. This through-hole component, housed in a TO-220 package, supports a maximum power dissipation of 100W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 3V threshold voltage and 940pF input capacitance.
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Stmicroelectronics STP12NM50N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 380mR |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 940pF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 60ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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