N-channel power MOSFET featuring 500V drain-source breakdown voltage and 11A continuous drain current. Offers a maximum drain-source on-resistance of 380mΩ at a 10V gate-source voltage. This through-hole component, housed in a TO-220 package, supports a maximum power dissipation of 100W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 3V threshold voltage and 940pF input capacitance.
PackageTO-220
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP12NM50N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
290mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
380mR
Fall Time
14ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
940pF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
100W
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
60ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP12NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STP12NM50N to view detailed technical specifications.
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