This N-channel power MOSFET is rated for 60 V drain-source voltage and 80 A continuous drain current. It uses STripFET F7 trench-gate technology to achieve a typical 4.2 mΩ on-resistance at VGS = 10 V and low gate charge for efficient switching. The device is supplied in a TO-220 package with tube packing and is intended for switching applications. It supports up to 160 W total dissipation at Tcase = 25 °C and operates over a junction temperature range from -55 °C to 175 °C. The datasheet also specifies high avalanche ruggedness and a low Crss/Ciss ratio for improved EMI immunity.
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Stmicroelectronics STP130N6F7 technical specifications.
| Transistor Polarity | N-channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 320A |
| On-Resistance | 4.2 typ, 5.0 maxmΩ |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 160W |
| Single Pulse Avalanche Energy | 200mJ |
| Operating Junction Temperature | -55 to 175°C |
| Thermal Resistance Junction-Case | 0.94°C/W |
| Input Capacitance | 2600 typpF |
| Output Capacitance | 1200 typpF |
| Reverse Transfer Capacitance | 115 typpF |
| Total Gate Charge | 42 typnC |
| Gate Threshold Voltage | 2 to 4V |
| Turn-On Delay Time | 24 typns |
| Rise Time | 44 typns |
| Turn-Off Delay Time | 62 typns |
| Fall Time | 24 typns |
| Reverse Recovery Time | 50 typns |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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