N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. This component offers a low 0.35 Ohm typical drain-source on-resistance and is housed in a TO-220 package for through-hole mounting. Key specifications include a 650V breakdown voltage, 110W maximum power dissipation, and operating temperatures from -55°C to 150°C. Fast switching characteristics are evident with a 9.5ns fall time and 11ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP13N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
380mR
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
580pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
380mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
41ns
Turn-On Delay Time
11ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP13N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP13N60M2 to view detailed technical specifications.
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