The STP13NM50N is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 12A. The device has a maximum power dissipation of 100W and a drain to source on resistance of 320mR. It is packaged in a TO-220AB flange mount package and is compliant with RoHS regulations.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STP13NM50N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 320mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 960pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP13NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STP13NM50N to view detailed technical specifications.
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