N-channel Power MOSFET featuring 600V drain-source voltage and 11A continuous drain current. FDmesh™ II series MOSFET offers 380mΩ maximum drain-source on-resistance and a fast diode. Packaged in a TO-220-3 through-hole mount, this component operates from -55°C to 150°C with a maximum power dissipation of 109W. Key switching parameters include a 15.4ns fall time and 9.6ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP13NM60ND technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 380mR |
| Fall Time | 15.4ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 845pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 109W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 9.6ns |
| Turn-On Delay Time | 46.5ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP13NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STP13NM60ND to view detailed technical specifications.
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