STP140N6F7

This N-channel power MOSFET uses STripFET F7 trench-gate technology to achieve low on-state resistance and reduced internal capacitance for efficient switching. It is rated for 60 V drain-source voltage, 80 A continuous drain current, and 158 W total power dissipation at 25 °C case temperature. The device is housed in a TO-220 package and is supplied in tube packing. It supports fast switching with 55 nC typical total gate charge, 3100 pF typical input capacitance, and 42.4 ns typical reverse recovery time. The junction temperature range extends to 175 °C maximum, with storage from -55 °C to 175 °C.