N-channel power MOSFET featuring 80V drain-source breakdown voltage and 90A continuous drain current. This device offers a low 3.5 mOhm typical drain-source on-resistance and a maximum of 4.3 mR. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 200W. Key switching characteristics include a 26ns turn-on delay and 44ns fall time.
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Stmicroelectronics STP140N8F7 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 44ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 6.34nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.3mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 26ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
| RoHS | Compliant |
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