N-channel power MOSFET featuring 80V drain-source breakdown voltage and 90A continuous drain current. This device offers a low 3.5 mOhm typical drain-source on-resistance and a maximum of 4.3 mR. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 200W. Key switching characteristics include a 26ns turn-on delay and 44ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STP140N8F7 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
90A
Drain to Source Breakdown Voltage
80V
Drain to Source Resistance
4.3mR
Drain to Source Voltage (Vdss)
80V
Fall Time
44ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
6.34nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.3mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
82ns
Turn-On Delay Time
26ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP140N8F7 Datasheet
Download the complete datasheet for Stmicroelectronics STP140N8F7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
