N-Channel POWER MOSFET featuring 500V drain-to-source breakdown voltage and 14A continuous drain current. Offers low 380mR drain-to-source resistance and Zener protection. Designed for through-hole mounting in a TO-220-3 package, this SuperMESH™ device boasts fast switching speeds with a 24ns turn-on delay and 12ns fall time. Maximum power dissipation is 35W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STP14NK50ZFP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
500V
Fall Time
12ns
Gate to Source Voltage (Vgs)
30V
Height
9.3mm
Input Capacitance
2nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
35W
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
54ns
Turn-On Delay Time
24ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP14NK50ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP14NK50ZFP to view detailed technical specifications.
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