N-channel power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 380mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a 125W maximum power dissipation and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
Stmicroelectronics STP14NM65N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 380mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 55ns |
| RoHS | Compliant |
No datasheet is available for this part.
