N-channel power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 380mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a 125W maximum power dissipation and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STP14NM65N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
380mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
380mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.3nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Nominal Vgs
3V
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
55ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP14NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STP14NM65N to view detailed technical specifications.
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