Stmicroelectronics
STP150N10F7
N-channel 100 V, 0.0036 Ohm typ., 110 A STripFET F7 Power MOSFET in TO-220 package
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP150N10F7 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
4.2mR
Drain to Source Voltage (Vdss)
100V
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
8.115nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
4.2mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
72ns
Turn-On Delay Time
33ns
Weight
0.01164oz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP150N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STP150N10F7 to view detailed technical specifications.
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