N-channel enhancement mode power MOSFET, 40V drain-source voltage, 80A continuous drain current, and 7mΩ maximum drain-source resistance at 10V. Features a TO-220AB through-hole package with 3 pins and a tab, suitable for automotive applications. Offers a maximum power dissipation of 300W and operates across a wide temperature range from -55°C to 175°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP150NF04 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
9.15(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
1.9
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
80A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
7@10VmOhm
Typical Gate Charge @ Vgs
118@10VnC
Typical Gate Charge @ 10V
118nC
Typical Input Capacitance @ Vds
3650@25VpF
Maximum Power Dissipation
300000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STP150NF04 Datasheet
Download the complete datasheet for Stmicroelectronics STP150NF04 to view detailed technical specifications.
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