N-channel power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 0.35 Ohm typical drain-source on-resistance, with a maximum of 380mR. Designed for through-hole mounting in a TO-220 package, this component boasts a 125W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 26ns fall time and 14ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STP15NM65N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
350mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
983pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
380mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
14ns
Turn-On Delay Time
55.5ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP15NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STP15NM65N to view detailed technical specifications.
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