N-channel power MOSFET featuring 75V drain-source breakdown voltage and a low 3.5 mOhm typical on-resistance. This component offers a continuous drain current of 120A and a maximum power dissipation of 330W, packaged in a TO-220 through-hole mount. It operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 22ns turn-on delay and 15ns fall time. RoHS compliant and lead-free, this STripFET™ MOSFET is designed for high-efficiency power applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power330W
Quick Jump:
Technical Specifications
Stmicroelectronics STP160N75F3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 4MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 6.75nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 22ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP160N75F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP160N75F3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
