N-channel power MOSFET featuring 75V drain-source breakdown voltage and a low 3.5 mOhm typical on-resistance. This component offers a continuous drain current of 120A and a maximum power dissipation of 330W, packaged in a TO-220 through-hole mount. It operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 22ns turn-on delay and 15ns fall time. RoHS compliant and lead-free, this STripFET™ MOSFET is designed for high-efficiency power applications.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power330W
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Technical Specifications
Stmicroelectronics STP160N75F3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
120A
Drain to Source Breakdown Voltage
75V
Drain to Source Resistance
4mR
Drain to Source Voltage (Vdss)
75V
Drain-source On Resistance-Max
4MR
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
6.75nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
330W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
330W
Radiation Hardening
No
Rds On Max
4mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
4V
Turn-Off Delay Time
100ns
Turn-On Delay Time
22ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP160N75F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP160N75F3 to view detailed technical specifications.
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