N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers a low 0.230 Ohm typical drain-source on-resistance, with a maximum of 299mR. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 90W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 7ns fall time, 25ns turn-on delay, and 30ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP16N65M5 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
299mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
299mR
Fall Time
7ns
Gate to Source Voltage (Vgs)
25V
Height
9.15mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
299mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
25ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP16N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP16N65M5 to view detailed technical specifications.
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