N-channel MOSFET with 250V drain-source breakdown voltage and 14A continuous drain current. Features a low 235mR drain-source on-resistance and 100W maximum power dissipation. Operates within a -55°C to 150°C temperature range, with a 20V gate-source voltage rating. Packaged in a TO-220 through-hole mount, this RoHS compliant component offers fast switching speeds with turn-on delay of 9ns and fall time of 17ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP16NF25 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
235mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
235MR
Dual Supply Voltage
250V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
680pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Through Hole
Nominal Vgs
3V
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Rds On Max
235mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Termination
Through Hole
Turn-Off Delay Time
35ns
Turn-On Delay Time
9ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP16NF25 Datasheet
Download the complete datasheet for Stmicroelectronics STP16NF25 to view detailed technical specifications.
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