The STP16NM50N is a high-power insulated gate bipolar transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 500V and a continuous drain current of 15A. The device is packaged in a TO-220AB case and is suitable for through-hole mounting. It is compliant with RoHS regulations and has a maximum power dissipation of 125W.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STP16NM50N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 260mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 260mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP16NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STP16NM50N to view detailed technical specifications.
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