N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 13A continuous drain current. This TO-220 packaged device offers a low 0.26 Ohm typical drain-source on-resistance, with a maximum of 285mR. Operating across a wide temperature range from -55°C to 150°C, it supports through-hole mounting and has a maximum power dissipation of 110W. Key switching characteristics include a 12ns turn-on delay and 25ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STP18NM60N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
260mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
285mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
285mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
55ns
Turn-On Delay Time
12ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP18NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP18NM60N to view detailed technical specifications.
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