N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 13A continuous drain current. This TO-220 packaged device offers a low 0.26 Ohm typical drain-source on-resistance, with a maximum of 285mR. Operating across a wide temperature range from -55°C to 150°C, it supports through-hole mounting and has a maximum power dissipation of 110W. Key switching characteristics include a 12ns turn-on delay and 25ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
Quick Jump:
Technical Specifications
Stmicroelectronics STP18NM60N technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 285mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 285mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 12ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP18NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP18NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
