N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 290mΩ maximum drain-source on-resistance and 130W power dissipation. Designed with a fast diode, it exhibits 18ns fall time, 13ns turn-off delay, and 55ns turn-on delay. Housed in a TO-220 package, this RoHS compliant device operates from -55°C to 150°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power130W
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Technical Specifications
Stmicroelectronics STP18NM60ND technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
290mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
290mR
Fall Time
18ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
1.03nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
130W
Radiation Hardening
No
Rds On Max
290mR
RoHS Compliant
Yes
Series
FDmesh™ II
Turn-Off Delay Time
13ns
Turn-On Delay Time
55ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP18NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STP18NM60ND to view detailed technical specifications.
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