N-channel Power MOSFET featuring 650V drain-source breakdown voltage and 13A continuous drain current. This through-hole component offers a low 290mΩ maximum drain-source on-resistance and 130W power dissipation. Designed with a fast diode, it exhibits 18ns fall time, 13ns turn-off delay, and 55ns turn-on delay. Housed in a TO-220 package, this RoHS compliant device operates from -55°C to 150°C.
Sign in to ask questions about the Stmicroelectronics STP18NM60ND datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Stmicroelectronics STP18NM60ND technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 290mR |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 1.03nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 130W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 130W |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 55ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP18NM60ND to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
