N-channel power MOSFET featuring 500V drain-source breakdown voltage and 14A continuous drain current. Offers a low 250mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a 110W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 12ns turn-on delay and 17ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STP19NM50N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
250mR
Fall Time
17ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
250mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
61ns
Turn-On Delay Time
12ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP19NM50N Datasheet
Download the complete datasheet for Stmicroelectronics STP19NM50N to view detailed technical specifications.
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