N-channel power MOSFET featuring 500V drain-source breakdown voltage and 14A continuous drain current. Offers a low 250mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this component boasts a 110W maximum power dissipation and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 12ns turn-on delay and 17ns fall time.
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Stmicroelectronics STP19NM50N technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 250mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 61ns |
| Turn-On Delay Time | 12ns |
| Width | 4.6mm |
| RoHS | Compliant |
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