N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15.5A continuous drain current. This through-hole component offers a low 270mΩ drain-source on-resistance and a maximum power dissipation of 150W. Designed for high-voltage applications, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 25ns turn-on delay and a 26ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STP19NM65N technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
15.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
270mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.9nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
150W
Radiation Hardening
No
Rds On Max
270mR
RoHS Compliant
Yes
Series
MDmesh™
Turn-Off Delay Time
80ns
Turn-On Delay Time
25ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP19NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STP19NM65N to view detailed technical specifications.
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