N-channel power MOSFET featuring 650V drain-source breakdown voltage and 15.5A continuous drain current. This through-hole component offers a low 270mΩ drain-source on-resistance and a maximum power dissipation of 150W. Designed for high-voltage applications, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 25ns turn-on delay and a 26ns fall time.
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Stmicroelectronics STP19NM65N technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 15.5A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 270mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 25ns |
| RoHS | Compliant |
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