N-channel SuperMESH3™ Power MOSFET in TO-220 package, featuring 1050V drain-source breakdown voltage and 1.4A continuous drain current. Offers a typical drain-source on-resistance of 8 Ohms, with a maximum of 11 Ohms. Includes fast switching characteristics with a 6ns turn-on delay and 27ns turn-off delay. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 60W.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STP1N105K3 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
1.4A
Drain to Source Breakdown Voltage
1.05kV
Drain to Source Resistance
11R
Drain to Source Voltage (Vdss)
1.05kV
Drain-source On Resistance-Max
11R
Fall Time
50ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
180pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
11R
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
27ns
Turn-On Delay Time
6ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP1N105K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP1N105K3 to view detailed technical specifications.
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