N-channel SuperMESH3™ Power MOSFET in TO-220 package, featuring 1050V drain-source breakdown voltage and 1.4A continuous drain current. Offers a typical drain-source on-resistance of 8 Ohms, with a maximum of 11 Ohms. Includes fast switching characteristics with a 6ns turn-on delay and 27ns turn-off delay. Designed for through-hole mounting, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 60W.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power60W
Quick Jump:
Technical Specifications
Stmicroelectronics STP1N105K3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 1.4A |
| Drain to Source Breakdown Voltage | 1.05kV |
| Drain to Source Resistance | 11R |
| Drain to Source Voltage (Vdss) | 1.05kV |
| Drain-source On Resistance-Max | 11R |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 180pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 11R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP1N105K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP1N105K3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.