The STP200N4F3 is a TO-220-3 flange mount N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 40V and a continuous drain current of 120A. The device has a maximum power dissipation of 300W and a drain to source resistance of 3.5mR. The STP200N4F3 is lead free and RoHS compliant, and is packaged in a rail/Tube format for through hole mounting.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Stmicroelectronics STP200N4F3 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 3.5mR |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 4.4mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP200N4F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP200N4F3 to view detailed technical specifications.
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