PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power330W
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Technical Specifications
Stmicroelectronics STP200N6F3 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 330W |
| Radiation Hardening | No |
| Rds On Max | 3.9mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 86ns |
| Turn-On Delay Time | 26ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP200N6F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP200N6F3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.