N-channel MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. This through-hole component offers a low 3.7mΩ drain-source resistance (Rds On Max) and 310W maximum power dissipation. Operating across a wide temperature range from -55°C to 175°C, it boasts fast switching characteristics with a 30ns turn-on delay and 120ns fall time. Packaged in a TO-220 case, this RoHS compliant device is ideal for high-current switching applications.
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Stmicroelectronics STP200NF04 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 5.1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 40V |
| Width | 4.6mm |
| RoHS | Compliant |
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