N-Channel Power MOSFET, TO-220AB package, featuring 40V drain-source breakdown voltage and 120A continuous drain current. Offers a low 3.8mΩ maximum drain-source on-resistance. Operates with a 16V gate-source voltage and boasts a maximum power dissipation of 300W. Includes fast switching characteristics with 37ns turn-on delay and 80ns fall time. Designed for through-hole mounting and RoHS compliant.
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Stmicroelectronics STP200NF04L technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 120A |
| Current Rating | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 3.8MR |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 6.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 37ns |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
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