N-channel power MOSFET with 950V drain-source breakdown voltage and 17.5A continuous drain current. Features 330mΩ maximum drain-source on-resistance and 250W power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-220 through-hole mount with N-CHANNEL polarity.
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Stmicroelectronics STP20N95K5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 17.5A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 330mR |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 330MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 330mR |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 17ns |
| Width | 4.6mm |
| RoHS | Compliant |
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