N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 20A continuous drain current. This through-hole component offers a low 290mΩ Rds On resistance and 192W maximum power dissipation. Designed with FDmesh™ technology, it exhibits a 4V threshold voltage, 25ns turn-on delay, and 22ns fall time. Packaged in a TO-220 case, it operates from -65°C to 150°C and is RoHS compliant.
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Stmicroelectronics STP20NM60FD technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 192W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 192W |
| Radiation Hardening | No |
| Rds On Max | 290mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
| RoHS | Compliant |
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