STMICROELECTRONICS

STP21NM50N

Datasheet

500V 18A N-CH MOSFET, 190mR, TO-220 Power Transistor

Stmicroelectronics

STP21NM50N

Name: STP21NM50N Stmicroelectronics
Brand: Stmicroelectronics
SKU: STP21NM50N

500V 18A N-CH MOSFET, 190mR, TO-220 Power Transistor

N-Channel Power MOSFET, TO-220 package, featuring 500V drain-source breakdown voltage and 18A continuous drain current. Offers a low 0.19 ohm Rds On (max) and 140W power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 22ns and fall time of 30ns. RoHS compliant and designed for through-hole mounting.

PackageTO-220

Current Rating18A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics STP21NM50N technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	18A
Current Rating	18A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	150mR
Drain to Source Voltage (Vdss)	500V
Fall Time	30ns
Gate to Source Voltage (Vgs)	25V
Height	9.15mm
Input Capacitance	1.95nF
Lead Free	Lead Free
Length	10.4mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	140W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	140W
Rds On Max	190mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	MDmesh™ II
Threshold Voltage	3V
Turn-Off Delay Time	90ns
Turn-On Delay Time	22ns
DC Rated Voltage	500V
Width	4.6mm