N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 17A continuous drain current. Offers a low 0.17 Ohm typical drain-source on-resistance and includes a fast diode. Packaged in a TO-220 through-hole mount, this component operates from -55°C to 150°C with a maximum power dissipation of 140W. Key electrical characteristics include a 4V threshold voltage and 1.8nF input capacitance.
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Stmicroelectronics STP21NM60ND technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 220mR |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 18ns |
| Width | 4.6mm |
| RoHS | Compliant |
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