N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 19.5A continuous drain current. Offers a low 180mΩ drain-source on-resistance and a fast diode for enhanced performance. Packaged in a TO-220 through-hole mount with a maximum power dissipation of 150W. Operating temperature range from -55°C to 150°C, with typical turn-on delay of 21ns and fall time of 40ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Stmicroelectronics STP23NM60ND datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 19.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 2.1nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 21ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP23NM60ND to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
