N-channel power MOSFET featuring 600V drain-source breakdown voltage and 18A continuous drain current. Offers a low 168mΩ typical drain-source on-resistance, with a maximum of 190mΩ. Housed in a TO-220 package for through-hole mounting, this component operates within a -55°C to 150°C temperature range and supports up to 150W power dissipation. Key switching characteristics include a 14ns turn-on delay and 61ns fall time.
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Stmicroelectronics STP24N60M2 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 168mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 190MR |
| Fall Time | 61ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 1.06nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | Mdmesh II Plus™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 14ns |
| Width | 4.6mm |
| RoHS | Compliant |
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