N-channel Power MOSFET, 800V drain-source voltage, 19.5A continuous drain current. Features SuperMESH process technology, 250W max power dissipation, and 260mΩ max drain-source resistance. Packaged in a TO-220AB through-hole configuration with 3 pins and a tab. Operates from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP25N80K5 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.4(Max) |
| Package Width (mm) | 4.6(Max) |
| Package Height (mm) | 9.15(Max) |
| Seated Plane Height (mm) | 19.68(Max) |
| Pin Pitch (mm) | 2.7(Max) |
| Package Weight (g) | 1.9 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SuperMESH |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 19.5A |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 260@10VmOhm |
| Typical Gate Charge @ Vgs | 40@10VnC |
| Typical Gate Charge @ 10V | 40nC |
| Typical Input Capacitance @ Vds | 1600@100VpF |
| Maximum Power Dissipation | 250000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics STP25N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP25N80K5 to view detailed technical specifications.
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