N-channel Power MOSFET, 800V drain-source voltage, 19.5A continuous drain current. Features SuperMESH process technology, 250W max power dissipation, and 260mΩ max drain-source resistance. Packaged in a TO-220AB through-hole configuration with 3 pins and a tab. Operates from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP25N80K5 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
9.15(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
1.9
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SuperMESH
Maximum Drain Source Voltage
800V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
19.5A
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
260@10VmOhm
Typical Gate Charge @ Vgs
40@10VnC
Typical Gate Charge @ 10V
40nC
Typical Input Capacitance @ Vds
1600@100VpF
Maximum Power Dissipation
250000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STP25N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP25N80K5 to view detailed technical specifications.
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