N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 21A continuous drain current. This device offers a low 0.13 Ohm typical drain-source on-resistance and a fast diode integrated within the FDmesh™ II series. Packaged in a TO-220 through-hole mount, it operates from -55°C to 150°C with a maximum power dissipation of 160W. Key switching parameters include a 40ns fall time, 50ns turn-off delay, and 60ns turn-on delay.
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Stmicroelectronics STP25NM60ND technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 160mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 60ns |
| Width | 4.6mm |
| RoHS | Compliant |
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