N-channel power MOSFET uses MDmesh DM2 fast-recovery diode technology for high-voltage switching applications. The device is rated for 600 V drain-source breakdown voltage, 21 A continuous drain current at 25 °C, and 170 W total dissipation in the TO-220 package. Typical on-resistance is 0.13 Ω at 10 V gate drive and 10.5 A drain current, with a 0.16 Ω maximum rating. The gate-source voltage rating is ±25 V, and built-in back-to-back Zener diodes support enhanced ESD performance. Tube packing is specified for the TO-220 order code.
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| Transistor Polarity | N-channel |
| Drain-Source Breakdown Voltage | 600V |
| Drain-Source Voltage at Maximum Junction Temperature | 650V |
| Continuous Drain Current at 25 °C | 21A |
| Continuous Drain Current at 100 °C | 14A |
| Pulsed Drain Current | 84A |
| Maximum Power Dissipation at 25 °C | 170W |
| Maximum Drain-Source On-Resistance | 0.16Ω |
| Typical Drain-Source On-Resistance | 0.13Ω |
| Gate Threshold Voltage | 3 to 5V |
| Gate-Source Voltage | ±25V |
| Input Capacitance | 1500 typ.pF |
| Output Capacitance | 70 typ.pF |
| Reverse Transfer Capacitance | 1.6 typ.pF |
| Total Gate Charge | 34 typ.nC |
| Gate-Source Charge | 8 typ.nC |
| Gate-Drain Charge | 18.5 typ.nC |
| Turn-On Delay Time | 16 typ.ns |
| Rise Time | 7.3 typ.ns |
| Turn-Off Delay Time | 53 typ.ns |
| Fall Time | 9.3 typ.ns |
| Source-Drain Current | 21A |
| Diode Forward Voltage | 1.6 typ.V |
| Reverse Recovery Time | 140 typ. at 25 °Cns |
| Single Pulse Avalanche Energy | 350mJ |
| Operating Junction Temperature | -55 to 150°C |
| Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.74°C/W |
| Package | TO-220 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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