N-channel Power MOSFET featuring 600V drain-source voltage and 23A continuous drain current. This component offers a low 0.120 Ohm typical drain-source resistance and a fast diode, with a maximum power dissipation of 190W. Packaged in a TO-220-3 through-hole mount, it operates from -55°C to 150°C and is RoHS compliant. Key switching parameters include a 27ns fall time, 92ns turn-off delay, and 23.5ns turn-on delay.
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Stmicroelectronics STP28NM60ND technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 2.09nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 92ns |
| Turn-On Delay Time | 23.5ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
| RoHS | Compliant |
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