N-channel power MOSFET featuring 620V drain-source breakdown voltage and 2.2A continuous drain current. Offers a maximum drain-source on-resistance of 3.6 ohms. This through-hole component is housed in a TO-220 package with a maximum power dissipation of 45W. Key switching characteristics include an 8ns turn-on delay and a 22ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STP2N62K3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 620V |
| Drain to Source Resistance | 3.6R |
| Drain to Source Voltage (Vdss) | 620V |
| Drain-source On Resistance-Max | 3.6R |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 3.6R |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | SuperMESH3™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 8ns |
| Width | 4.6mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STP2N62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP2N62K3 to view detailed technical specifications.
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